TRRAM is a transparent RAM

There is possibility of the electronic gadgets to go transparent by enhancing the transparency property of the materials and this has been proved by the personalities given under.
Jung Won Seo,
Jae-Woo Park,
Keong Su Lim,
Ji-Hwan Yang and
Sang Jung Kang,
{School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)}.

The fabrication of a fully transparent resistive random access memory (TRRAM) device was possible and this is based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81%(including the substrate) in the visible region and an
excellent switching behavior under 3 V.

The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10 years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.

The beside picture deicts the Nokia Morph concept phone which uses the nanotechnology concepts and also the tranparency property of the electronic gadgets.