New imaging techniques .

Optical and electronic properties of small assemblages of atoms called quantum dots depend upon their electronic structure . Not just what's on the surface , but also what's inside . While scientists can calculate the electronic structure , they need to know where the atoms are positioned to do so accurately .

Getting this information , however, has proved to be a challenge for nanocrystals like quantum dots. mapping out positions of atoms requires clues provided by the diffraction alone are not enough .

By combining two sources of information , images and diffraction patterns taken with the same day electron microscope , researchers at the U. of I.can achieve sub-angstrom resolution of structures that were not possible before .

We show that for cadmium - sulfide nanocrystals, the improved image resolution allows a determination of their atomic structures.

Images from electron microscope can resolve individual atoms in a nanocrystal, but the atoms suffer radiation damage . This limits the length of observations . patterns from x-ray diffraction can be used to determine the structure of large crystals, but not for nanocrystals , which are too small and don't diffract well .

To achieve sub-angstrom resolution Zou and colleagues developed a reiterative are algorithm that processes and combines shape information from the lower resolution images and structure information from the high resolution diffraction pattern . Both the image and the pattern are taken with the same transmission - electron microscope .

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TRRAM is a transparent RAM

There is possibility of the electronic gadgets to go transparent by enhancing the transparency property of the materials and this has been proved by the personalities given under.
Jung Won Seo,
Jae-Woo Park,
Keong Su Lim,
Ji-Hwan Yang and
Sang Jung Kang,
{School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)}.

The fabrication of a fully transparent resistive random access memory (TRRAM) device was possible and this is based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81%(including the substrate) in the visible region and an
excellent switching behavior under 3 V.

The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10 years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.

The beside picture deicts the Nokia Morph concept phone which uses the nanotechnology concepts and also the tranparency property of the electronic gadgets.

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